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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Open-Access 3-μm SOI Waveguide Platform for Dense Photonic Integrated Circuits
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Open-Access 3-μm SOI Waveguide Platform for Dense Photonic Integrated Circuits

机译:用于致密光子集成电路的开放式3-μmsoi波导平台

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摘要

This paper gives an overview of the 3-mu m silicon-on-insulator (SOI) platform that is openly available from VTT and suitable for the realization of photonic integrated circuits (PICs) for near and mid-infrared applications. Specific benefits of this thick-SOI PIC platform include low optical losses (similar to 0.1 dB/cm), ultradense integration (mu m-scale bends), small polarization dependency (down-to-zero birefringence), and ability to tolerate relatively high optical powers (>1 W). Fabrication technology is based on an i-line stepper and 150-mm wafer size. Open access to the waveguide platform is supported by design kits, wafer-level testing, multi-project wafer runs, dedicated R&D runs, and small-to-medium volume manufacturing.
机译:本文概述了3-MU M硅 - 绝缘体(SOI)平台,可从VTT公开使用,适用于实现近红外应用的光子集成电路(PICS)。这种厚SOI PIC平台的具体益处包括低光损失(类似于0.1dB / cm),超声积分(MU M级弯曲),小偏振依赖性(零零双折射),以及容忍相对高的能力光功率(> 1 w)。制造技术基于I线步进器和150mm晶片尺寸。设计套件,晶圆级测试,多项目晶圆运行,专用研发运行以及小于中等卷制造,支持对波导平台的开放式访问。

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