Foundry Photonic Process Extension With Bandgap Tuning Using Selective Area Growth

摘要

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.