Thermal Characteristics of 1.55- m InGaAlAs Quantum Well Buried Heterostructure Lasers

摘要

We have investigated the threshold current $I_{rm th}$ and differential quantum efficiency as the function of temperature in InGaAlAs/InP multiple quantum well (MQWs) buried heterostructure (BH) lasers. We find that the temperature sensitivity of $I_{rm th}$ is due to nonradiative recombination, which accounts for up to $sim$80% of $J_{rm th}$ at room temperature. Analysis of spontaneous emission emitted from the devices show that the dominant nonradiative recombination process is consistent with Auger recombination. We further show that the above threshold differential internal quantum efficiency $eta_{i}$ is $sim$ 80% at 20$~^{circ}{hbox{C}}$ remaining stable up to 80$~^{circ}{hbox{C}}$ . In contrast, the internal optical loss, $alpha_{i}$, increases from 15 ${hbox{cm}}^{-1}$ at 20$~^{circ}{hbox{C}}$ to 22 ${hbox{cm}}^{-1}$ at 80$~^{circ}{hbox{C}}$ , consistent with inter-valence band absorption (IVBA). This suggests that the decrease in power output at elevated temperatures is associated with both Auger recombination and IVBA.