Narrow spectral linewidth of MBE-grown GaInAs/AlInAs MQW lasers in the 1.55 mu m range

摘要

GaInAs-AlInAs multi-quantum-well (MQW) lasers fabricated by molecular-beam epitaxy (MBE) on InP substrates are considered. Room-temperature CW operation of ridge-type stripe MQW lasers was observed in the 1.55- mu m wavelength range. Spectral behavior of the MQW lasers was investigated from the standpoint of the linewidth and chirping characteristics. The minimum value of the spectral linewidth was as narrow as 2.5 MHz at an output power of 10 mW in a diode with a cavity length of 750 mu m. Small chirping characteristics were also confirmed, in which 1.5-AA chirp width was observed at 1-GHz direct modulation with a modulation depth of 67%.