On the permanent dipole-induced two-level Raman scattering in semiconductor quantum wells in electric field

摘要

The permanent dipole-induced two-level Raman scattering in semiconductor quantum wells in a static electric field is analyzed. Calculations performed for GaAs/Al/sub x/Ga/sub 1-x/As multiple quantum wells (MQWs) indicate that reasonable, but not high, Stokes wave amplification could be obtained, and eventually used for IR generation. The gain is limited primarily by reststrahlen absorption and a rather large transition linewidth.