Analysis of an InGaAsP/InP twin-overlayed-waveguide switch

摘要

This paper examines the design considerations for a device combining vertical stacking of waveguides, carrier injection, and codirectional switching in InGaAsP/InP materials and demonstrates that many favorable features can be found in such a device, namely, an interaction length of about 408 /spl mu/m, switching with about 1 V with an injection current density of the order of 108-988 A/cm/sup 2/ and a channel isolation up to 25 db with an absorption loss of under 1 dB. We base our argument on a self-consistent numerical calculation.