Optimization of long wavelength InGaAsP strained quantum-well lasers

摘要

A theoretical study of InGaAsP-InGaAsP multiple quantum-well lasers emitting at 1.55 /spl mu/m has been carried out to investigate the variation of threshold current density and differential gain with strain, well width and well number. We show that the greatest scope for exploiting this quaternary alloy in laser structures is through the use of compressive wells with unstrained or tensile barriers. We consider structures with a fixed compressive strain of 1% but variable well width, and also with fixed well width but variable strain from 0% to 1.75%. For structures with 1% compressive wells and unstrained barriers we find that the optimum structure for lowest threshold current density with sizable differential gain consists of six 35-/spl Aring/ quantum wells. We find also that there is little benefit to having compressive strains greater than 1.2%. In addition we examine zero-net-strain (ZNS) structures with compressive wells and tensile barriers. We show how the conduction band offset can be significantly increased and valence band offset reduced in such structures. Our gain calculations suggest that the large modification in band offset can decrease the threshold current density compared to similar devices with unstrained barriers.