首页> 外文期刊>IEEE Journal of Quantum Electronics >Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-/spl mu/m GaInAs-GaInP strained quantum-well laser
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Aging time dependence of catastrophic optical damage (COD) failure of a 0.98-/spl mu/m GaInAs-GaInP strained quantum-well laser

机译:0.98- / splμm/ m GaInAs-GaInP应变量子阱激光器的灾难性光学损伤(COD)失效的时效时间依赖性

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In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-/spl mu/m GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on the stress-strength model, we first investigated experimentally the dependence of the critical power level (CPL) at which COD would take place upon the aging time. Then applying a statistical treatment to this result, we found for the first time that CPL data at each aging time could be considered to distribute according to the Weibull statistics, and the decrease rate of the CPL with the aging time depended very strongly on the injection current. Finally, using the relationship between the decrease rate of the CPL with the aging time and the current, we predicted roughly the time of a COD failure occurrence for both large and small current cases. As a result, we clarified that for our Al-free uncoated 0.98-/spl mu/m laser, a COD failure became a fatal problem in the case of a large-current (high-power) operation.
机译:在本文中,我们以注入电流为参数,研究了无铝,未镀膜的0.98- / spl mu / m GaInAs-GaInP应变量子阱激光器的灾难性光学损伤(COD)失效的老化时间依赖性。基于应力强度模型,我们首先通过实验研究了COD发生时的临界功率水平(CPL)对老化时间的依赖性。然后对该结果进行统计学处理,我们首次发现每个老化时间的CPL数据都可以根据Weibull统计数据考虑分布,并且CPL随老化时间的降低率在很大程度上取决于进样量当前。最后,利用CPL的降低率与时效时间和电流之间的关系,我们大致预测了大电流和小电流情况下COD失效发生的时间。结果,我们澄清了对于我们的无铝,未镀膜的0.98- / splμm/ m激光器,在大电流(大功率)操作的情况下,COD失效成为致命的问题。

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