InGaAlAs-InP quantum-well infrared photodetectors for 8-20-Μmwavelengths

摘要

We demonstrate the first long-wavelength quantum-well infrarednphotodetectors using the lattice-matched n-doped InGaAlAs-InP materialsnsystem. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result inncutoff wavelengths of 8.5, 13.3, and 19.4 Μm, respectively, a 45°nfacet coupled illumination responsivity of R=0.37 Μm and detectivitynof DΛ*=3×108ncm·√(Hz)· at T=77 K, for a cutoff wavelengthnΛc=13.3 Μm have been achieved. Based on thenmeasured intersubband photoresponse wavelength, a null conduction bandnoffset is expected for In0.52Ga0.21Al0.27nAs-InP heterojunctions