Semiconductor laser model based on moment method solutions of theBoltzmann transport equation

摘要

Semiconductor laser models based on density matrix theory havenbeen frequently reported on and are useful in recognizing stimulationnemission. However, most of these models use the two-discrete-levelnapproximation, making it difficult to obtain a detailed description ofnthe carrier distribution. The mechanism of the carrier distributionnvariations in semiconductor lasers will be discussed from the point ofnview of the Boltzmann transport equation with the relaxation timenapproximation, and its effect on laser performance will be demonstratednin this paper