Enhanced optical polarization anisotropy in quantum wells under anisotropic tensile strain

摘要

Anisotropic in-plane strain in quantum wells leads to an optical polarization anisotropy that can be exploited in optoelectronic devices such as modulators. A theoretical model shows that the behavior of the polarization anisotropy with increasing strain anisotropy is radically different for quantum wells under anisotropic tensile and compressive strains of equal magnitude. This strikingly different behavior arises from the different valence-subband mixing that occurs in the cases of anisotropic tensile and compressive strain. Specifically, the mixing of the first heavy- and light-hole subbands that occurs only under anisotropic tensile strain is central to the polarization anisotropy.