Correlation of Theory With Experimental SOAs

摘要

Predictions for the near-traveling wave amplifier (NTWA) with multiple-quantum-well structures have been developed. The continuity equation for quantum wells (QWs) with high carrier densities is combined with the amplifier TW gain equation expressed in terms of stimulated lifetime. This formulation allows the signal gain to be related to the bias current and the optical input signal through Fermi energies. The charge neutrality condition also plays an important role for high carrier density QW amplifiers. Auger recombination and heating effects are incorporated as essential components of the model. Experimental measurements of gain versus bias current and output power for both lambda(velence)850- and 1550-nm devices are found to be very well matched by the calculated results.