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Theoretical Investigations of [110] IV-VI Lead Salt Edge-Emitting Lasers

机译:[110] IV-VI铅盐边缘发射激光器的理论研究

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Theoretical simulations on a new [110]-orientated IV-VI lead-salt midinfrared (IR) edge-emitting laser are performed in comparison with the conventional [100] orientated laser. The modal gain of quantum-well (QW) structure on [110] orientation is significantly higher than that on the [100] orientation. Light versus current (L-I) characteristics at different operation temperatures are simulated by solving the coupled rate equations. The maximum operation temperature of [110] laser is 70 degree higher than that of conventional [100] laser. To further improve the laser performance a new Si_(3)N_(4) clad laser structure is proposed to improve the heat dissipation. The effects of other parameters on the performance of the lasers, such as Auger recombination, Schockley-Read recombination, facet reflectivity and cavity length, are also investigated. The simulated results show that with optimized laser structure and modestly reduced Auger recombination [110] IV-VI lead-salt edge-emitting laser could produce output power of about 10 mW at room temperature.
机译:与传统的[100]定向激光器相比,对新型[110]定向IV-VI铅盐中红外(IR)边缘发射激光器进行了理论模拟。 [110]方向上的量子阱(QW)结构的模态增益明显高于[100]方向上的模态增益。通过求解耦合速率方程,可以模拟在不同工作温度下的光与电流(L-I)特性。 [110]激光器的最高工作温度比常规[100]激光器的最高工作温度高70度。为了进一步提高激光器的性能,提出了一种新型的Si_(3)N_(4)包覆激光结构,以提高散热性能。还研究了其他参数对激光器性能的影响,例如俄歇复合,肖克利-雷德复合,小面反射率和腔长。仿真结果表明,采用优化的激光器结构并适当减少俄歇复合[110] IV-VI铅盐边缘发射激光器在室温下可产生约10 mW的输出功率。

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