Investigation of Laser-Mode Anticompetition in Semiconductor Lasers

摘要

Influential factors of laser-mode anticompetition are investigated in dual-wavelength semiconductor laser. Experiment shows that with increasing wavelength, separation, or decreasing initial power of the long-wavelength mode (LWM), the slope of the anticompetition curve and the maximum power increment of the LWM increase. Under fixed wavelength separation, anticompetition can exist only when the power of the short-wavelength mode (SWM) is below a certain level. In addition, the wavelength position has an effect on anticompetition. Different injection current also results in different behaviors of anticompetition. Anticompetition can only be observed with varying the power of the SWM.