Enhancing the L1 Data Cache Design to Mitigate HCI

摘要

Over the lifetime of a microprocessor, the Hot Carrier Injection (HCI) phenomenon degrades the threshold voltage, which causes slower transistor switching and eventually results in timing violations and faulty operation. This effect appears when the memory cell contents flip from logic `0' to `1' and vice versa. In caches, the majority of cell flips are concentrated into only a few of the total memory cells that make up each data word. In addition, other researchers have noted that zero is the most commonly-stored data value in a cache, and have taken advantage of this behavior to propose data compression and power reduction techniques. Contrary to these works, we use this information to extend the lifetime of the caches by introducing two microarchitectural techniques that spread and reduce the number of flips across the first-level (L1) data cache cells. Experimental results show that, compared to the conventional approach, the proposed mechanisms reduce the highest cell flip peak up to 65.8 percent, whereas the threshold voltage degradation savings range from 32.0 to 79.9 percent depending on the application.