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首页> 外文期刊>IEEE circuits and systems magazine >Hardware Security Exploiting Post-CMOS Devices: Fundamental Device Characteristics, State-of-the-Art Countermeasures, Challenges and Roadmap
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Hardware Security Exploiting Post-CMOS Devices: Fundamental Device Characteristics, State-of-the-Art Countermeasures, Challenges and Roadmap

机译:硬件安全开发后CMOS设备:基本设备特征,最先进的对策,挑战和路线图

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摘要

Emerging nanoelectronic semiconductor devices have been quite promising in enhancing hardware-oriented security and trust. However, implementing hardware security primitives and methodologies requires large area overhead and power consumption. Furthermore, emerging new attack models and vulnerabilities are regularly evolving and cannot be adequately addressed by current CMOS technology. This paper for the first time presents a comprehensive review of numerous post-CMOS technologies based hardware security primitives and methodologies, particularly true random number generators, physically unclonable functions, side-channel analysis countermeasures, and hardware obfuscation techniques. Various beyond-CMOS device technologies including tunneling FET (TFET), hybrid phase transition FET (HyperFET), carbon nanotube FET (CNTFET), silicon nanowire FET (SiNWFET), symmetrical tunneling FET (SymFET), phase-change memory (PCM), spin-transfer torque magnetic tunnel junction (STT-MTJ), resistive random access memory (RRAM) have been considered in this study. First, the basic principle of operation and unusual characteristics of nanoelectronic devices used for hardware security applications have been extensively discussed. Later, CMOS technology challenges and benefits of emerging nanotechnologies for the design of hardware security primitives and methodologies have been reported. Finally, different analyses have been presented to demonstrate the promising performance of post-CMOS devices over the current CMOS technology in different countermeasures. Additionally, challenges, future directions, and plans have been presented to achieve more research outcomes in this field.
机译:新兴纳米电子半导体器件在提高硬件导向的安全性和信任方面非常有前途。但是,实现硬件安全基元和方法需要大面积的开销和功耗。此外,新兴的新攻击模型和漏洞通常经常发展,目前的CMOS技术无法充分解决。本文首次提出了对基于CMOS技术的许多后CMOS技术的全面审查,特别是真正的随机数发生器,物理上不可分析的功能,侧通道分析对策和硬件混淆技术。包括隧道FET(TFET),混合相变fET(HINDFET),碳纳米管FET(CNTFET),硅纳米线FET(SINWFET),对称隧道FET(Symfet),相变存储器(PCM),在本研究中考虑了旋转转印扭矩磁隧道结(STT-MTJ),电阻随机存取存储器(RRAM)。首先,已经广泛地讨论了用于硬件安全应用的纳米电子器件的操作和不寻常特性的基本原理。后来,已经报道了CMOS技术挑战和新出现的纳米技术设计用于设计硬件安全原语和方法的益处。最后,已经提出了不同的分析来展示在不同的对策中对电流CMOS技术在CMOS器件上的有希望的性能。此外,已经提出了挑战,未来的指导和计划,以实现这一领域的更多研究结果。

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  • 来源
    《IEEE circuits and systems magazine》 |2021年第3期|4-30|共27页
  • 作者单位

    DSPM Int Inst Informat Technol Dept Elect & Commun Naya Raipur 493661 Chhattisgarh India;

    DSPM Int Inst Informat Technol Dept Elect & Commun Naya Raipur 493661 Chhattisgarh India;

    Birla Inst Technol & Sci Dept Elect & Elect Engn Hyderabad 500078 India;

    SRM Univ Sch Engn & Appl Sci Dept Elect & Commun Guntur 522502 Andhra Pradesh India;

    Indian Inst Technol Roorkee Dept Elect & Commun Engn Roorkee 247667 Uttar Pradesh India;

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