Performance characterisation of a microwave transistor

摘要

The maximum transducer power gain GTmax of a bilateralnmicrowave transistor-is analytically expressed in terms of only noisenfigure F, input-VSWR Vi and the open-circuit parameters |z|.nThe analysis is based on a geometrical approach using the constantnnoise, input VSWR and gain circles in the source and input impedancenplanes keeping the solution within the physical bounds. Thencorresponding source Zs and load ZL terminationsnare also obtained analytically. Cross-relations among the possible (F, Vni, GTmax) triplets have been utilised in obtainingnthe performance contours of a microwave transistor at an operatingnfrequency and bias condition. This type of representation of performancenpromises to be used in data sheets of microwave transistors bynmanufacturers in forthcoming years