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Smith chart formulation of performance characterisation for a microwave transistor

机译:微波晶体管性能表征的史密斯圆图公式

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摘要

A scattering parameter theory of the performance characterisation for a bilateral transistor is developed, where mismatching at the input port V_i is considered as a degree of freedom, and its combination with noise and gain is mapped as circles in the Γ_in-plane. Stability analysis is based on the unconditionally stable working area (USWA) concept, and all possible USWA configurations are determined by the necessary and sufficient conditions.' For each USWA configuration, the constrained maximum stable gain G_Tmax and its termination couple (Γ_s, Γ_L) are expressed as functions of the input VSWR V_i noise figure F and the scattering S and noise N parameter vectors. Furthermore, the possible incompatible cases for the (F V_i G_Tmax ) triplets are determined by their necessary and sufficient conditions. A computer program based on this formulation is developed, and cross- relations among the (F V_i, G_Tmax) triplets have been utilised in obtaining the performance contours at an operating frequency and bias condition.
机译:建立了双侧晶体管性能表征的散射参数理论,其中将输入端口V_i的失配视为自由度,并将其与噪声和增益的组合映射为Γ_in-plane中的圆。稳定性分析基于无条件稳定工作区(USWA)的概念,所有可能的USWA配置都由必要和充分的条件决定。对于每个USWA配置,受约束的最大稳定增益G_Tmax及其端接对(Γ_s,Γ_L)表示为输入VSWR V_i噪声系数F和散射S和噪声N参数向量的函数。此外,(F V_i G_Tmax)三元组的可能不兼容情况由它们的必要条件和充分条件确定。开发了基于该公式的计算机程序,并已利用(F V_i,G_Tmax)三胞胎之间的交叉关系来获得工作频率和偏置条件下的性能轮廓。

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