首页> 外文期刊>IEE proceedings. Part G >CMOS shunt regulator with bandgap reference for automotive environment
【24h】

CMOS shunt regulator with bandgap reference for automotive environment

机译:具有带隙基准的CMOS并联稳压器,适用于汽车环境

获取原文
获取原文并翻译 | 示例
           

摘要

A temperature-stable shunt regulator for automotive environments using standard digital CMOS technology is described. The new technique employed to implement the bandgap reference cell reduces the influence of the high offset input voltages present in the CMOS op-amps and allows for a simple and cost-effective design of a nontrimmed chip with good temperature characteristics. The shunt regulator operates from battery voltages as low as 6 V and withstands voltage peaks up to 120 V. The regulated output voltage (5.15 V) presents a temperature coefficient of 140 ppm/ degrees C in the -15 to +105 degrees C temperature range. The shunt regulator was integrated in a custom automotive CMOS digital chip and occupies 0.53 mm/sup 2/.
机译:描述了一种使用标准数字CMOS技术的汽车环境温度稳定并联稳压器。用于实现带隙参考单元的新技术可减少CMOS运算放大器中存在的高偏移输入电压的影响,并允许对具有良好温度特性的未修整芯片进行简单且经济高效的设计。并联稳压器可在低至6 V的电池电压下工作,并能承受高达120 V的电压峰值。稳定的输出电压(5.15 V)在-15至+105摄氏度的温度范围内具有140 ppm /摄氏度的温度系数。并联稳压器集成在定制的汽车CMOS数字芯片中,占0.53 mm / sup 2 /。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号