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IBM POWER8 circuit design and energy optimization

机译:IBM POWER8电路设计和能源优化

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The IBM POWER8™ processor is a 649-mm , 4.2-billion transistor, high-frequency microprocessor fabricated in the IBM 22-nm silicon on insulator (SOI) technology with embedded dynamic random access memory (eDRAM) and 15 layers of metal. With its twelve architecturally enhanced, eight-way multithreaded cores, 96-MB high-bandwidth shared third-level cache, and increased on and off-chip bandwidth, the POWER8 processor delivers industry-leading performance. This paper describes the circuit techniques and design methodologies that were employed for implementing this chip and that allowed it to maintain the power dissipation at the level of its predecessor while delivering a threefold increase in per-socket performance. Among the innovative technologies employed by the processor are resonant clocking, on-chip per-core voltage regulation, and enhanced eDRAM arrays.
机译:IBM POWER8™处理器是649毫米,42亿晶体管的高频微处理器,采用IBM 22纳米绝缘体上硅(SOI)技术制造,具有嵌入式动态随机存取存储器(eDRAM)和15层金属。凭借其十二个体系结构增强的八路多线程内核,96 MB高带宽共享第三级高速缓存以及增加的片上和片外带宽,POWER8处理器可提供业界领先的性能。本文介绍了用于实现该芯片的电路技术和设计方法,这些电路技术和设计方法使该芯片能够将功耗保持在其前代产品水平,同时使每路插槽的性能提高三倍。处理器采用的创新技术包括谐振时钟,片上每核电压调节和增强型eDRAM阵列。

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