Infra-red materials activities at gec-marconi infra-red limited: part II-epitaxial growth techniques

摘要

This paper follows on Part I (bulk growth techniques) which appeared in the previous issue of this Journal. The history and current status of liquid phase epitaxy, LEP, and metal-organic vapour phase epitaxy, MOVPE, processes are described in This paper. Epitaxial growth by LPE satisfiers current requirements for large areas of Uniform material for staring focal plane arrays (FPAs). Research work on MOVPE For the growth of heterostructures aimed at the next generation of IR detectors based On non-equilibrium operation is described.