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Experimental study on spatial uniformity of H~- ion beam in a large negative ion source

机译:大型负离子源中H〜-离子束空间均匀性的实验研究

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The origin of the beam non-uniformity, that is one of the key issues in JT-60 negative ion sources, was experimentally examined by measuring correlations between the intensity of the H~- ion beam and plasma parameters, such as an electron temperature and plasma density in the JAERI 10 A negative ion source. The ion source was operated without cesium. Although a uniform filter field was applied, the electron temperature near plasma grid (PG) was higher than 1 eV in the upper half region of the longitudinal direction, where the spatial beam intensity decreased rapidly. This indicates that the beam non-uniformity is caused by a higher electron temperature than 1 eV, namely, by a leakage of the high-energy electrons toward the PG. To investigate the path of high-energy electrons leaking into the PG, a metal plate of 50 mm x 50 mm was placed in the plasma. By placing the plate in a weak magnetic field of < 30 G leading to a driver region near the upper wall, the electron temperature near the PG was sufficiently reduced to 1 eV in the upper half region, where the beam intensity was simultaneously increased. As a result, a 20% gain of the beam current was obtained. Further, the source of the high-energy electrons leaking toward the PG was examined by changing the relative filament position to the upper wall. It is found that the filaments closest to the upper wall, i.e., at 80 mm from the upper wall is one of the sources of the high-energy electrons leaking into the PG.
机译:通过测量H〜-离子束强度与等离子体参数(例如电子温度和温度)之间的相关关系,通过实验检查了束不均匀性的起源,这是JT-60负离子源中的关键问题之一。 JAERI 10 A负离子源中的等离子体密度。在没有铯的情况下操作离子源。尽管施加了均匀的滤光器场,但是在纵向的上半部区域中,靠近等离子体栅极(PG)的电子温度高于1 eV,在该温度下空间束强度迅速下降。这表明电子束的不均匀性是由高于1 eV的电子温度引起的,也就是由高能电子向PG的泄漏引起的。为了研究高能电子泄漏到PG中的路径,将50 mm x 50 mm的金属板放置在等离子体中。通过将板置于小于30 G的弱磁场中,导致上壁附近的驱动器区域,PG附近的电子温度在上半部区域被充分降低到1 eV,在该处电子束强度同时增加。结果,获得了束电流的20%的增益。此外,通过改变相对于上壁的灯丝位置来检查向PG泄漏的高能电子的来源。发现最接近上壁,即距上壁80mm的细丝是泄漏到PG中的高能电子的来源之一。

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