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Vacancy like defects and hardening of tungsten under irradiation with He ions at 800 degrees C

机译:在800℃He离子辐照下,钨会出现空位缺陷和硬化

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摘要

The irradiation induced hardening and vacancy like defects are investigated as a function of irradiation fluences with 200 keV He ion implantation at 800 degrees C in this work. Nano-indentation tests show the irradiation induces hardening and the hardness values increase with increasing irradiation fluences. Doppler broadening spectroscopy analyses of slow positron annihilation find that a large amount of vacancy like defects are produced under irradiation. When the He/dpa ratio is less than about 2.2% He/dpa, the vacancy like defects include mainly empty vacancy clusters and loops, and HenVm complexes. When the He/dpa ratio is more than about 2.2% He/dpa, the vacancy like defects become mainly HenVm complexes with increasing irradiation fluences. Meanwhile, these complexes increase in size and He/V ratio while the irradiation fluences increase. Based on the Orowan hardening mechanism, we discuss the relationship between irradiation induced hardening and defects under indentation, especially the contribution of HenVm complexes to the hardening. (C) 2017 Elsevier B.V. All rights reserved.
机译:在这项工作中,研究了在200 keV He离子注入下,在800摄氏度下,辐照引起的硬化和空缺样缺陷与辐照注量的关系。纳米压痕测试表明,辐照会导致硬化,并且硬度值会随着辐照通量的增加而增加。慢正电子an没的多普勒加宽光谱分析发现,在辐射下会产生大量的空位,如缺陷。当He / dpa比率小于约2.2%He / dpa时,像缺陷的空位主要包括空的空位簇和环,以及HenVm复合物。当He / dpa比率大于约2.2%He / dpa时,随着辐射通量的增加,空位状缺陷主要变为HenVm复合物。同时,这些配合物的尺寸和He / V比增加,而辐射通量增加。基于Orowan硬化机理,我们讨论了辐射诱导的硬化与压痕下缺陷之间的关系,特别是HenVm复合物对硬化的贡献。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Fusion Engineering and Design》 |2017年第10期|313-318|共6页
  • 作者单位

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    North China Elect Power Univ, Beijing 102206, Peoples R China;

    Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315200, Zhejiang, Peoples R China;

    Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China;

    Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

    Chinese Acad Sci, Inst Modern Phys, Lanzhou 710000, Gansu, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Vacancy like defect; Hardening; Tungsten; He irradiation; HenVm complex;

    机译:空位状缺陷;硬化;钨;He辐射;HenVm络合物;

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