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Numerical analyses of impurity behaviors for CFETR advanced scenarios by core-edge integrated simulations

机译:CORE-EDGE集成模拟CFETR高级方案杂质行为的数值分析

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摘要

The impurity behaviors for the advanced scenarios of CFETR with full tungsten divertor have been analyzed. Core plasma profiles for steady state and hybrid scenarios are simulated by consistently iterative transport calculations within the OMFIT framework. The core-SOL integrated COREDIV code is then used to evaluate the effects of different seeding impurities (Ne, Ar, Kr) with the OMFIT modelled core plasma parameters as input. The impurity behaviors for the two modelled scenarios are similar. Seeding by all the considered impurities can effectively reduce the power to the divertor below the acceptable level. For Ne and Ar seeding, it is possible to achieve H-mode plasma operation with power from the core plasma to the SOL higher than L-H transition power threshold. However, higher Ne seeding rate would strongly reduce the fusion power due to the dilution effect. Kr seeding seems to be infeasible because the power crossing the separatrix would be lower than the L-H transition threshold, when the seeding rate is high enough to meet the divertor requirements. Higher separatrix electron density or SOL diffusion can slightly reduce the core radiation. Although normal COREDIV simulations are performed with a fixed H-98 factor, simulations with fixed transport indicate that higher impurity seeding rate leads to a decrease of confinement and fusion gain, due to the increase of impurity radiation loss in the core plasma.
机译:已经分析了具有全钨界分板的高级场景的杂质行为。通过在omfit框架内一直迭代的运输计算模拟用于稳态和混合情景的核心等离子体曲线。然后使用核心-OL集成的COREDIV码来评估不同播种杂质(NE,AR,KR)与OMFIT建模的核心等离子体参数的影响。两个建模方案的杂质行为是相似的。通过所有所考虑的杂质播种可以有效地降低到偏移器的功率低于可接受的水平。对于NE和AR播种,可以通过从芯等离子体到高于L-H过渡功率阈值的溶胶来实现H模式等离子体操作。然而,由于稀释效应,较高的NE播种率将大力降低融合功率。 KR播种似乎是不可行的,因为当播种速率足够高以满足偏移的要求时,交叉的电力将低于L-H转换阈值。更高的分离器电子密度或溶胶扩散可以略微降低核心辐射。尽管用固定的H-98因子进行正常的COREDIV仿真,但由于核心等离子体中的杂质辐射损失的增加,具有固定运输的模拟表明具有更高的杂质播种速率导致限制和融合增益的降低。

著录项

  • 来源
    《Fusion Engineering and Design》 |2020年第9期|111865.1-111865.6|共6页
  • 作者单位

    Shenzhen Univ Adv Energy Res Ctr Shenzhen 518060 Peoples R China|Shenzhen Univ Coll Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China|Chinese Acad Sci Inst Plasma Phys Hefei 230031 Anhui Peoples R China;

    Natl Ctr Nucl Res PL-05400 Otwock Poland;

    Chinese Acad Sci Inst Plasma Phys Hefei 230031 Anhui Peoples R China;

    Inst Plasma Phys & Laser Microfus Hery Str 23 PL-01497 Warsaw Poland;

    Chinese Acad Sci Inst Plasma Phys Hefei 230031 Anhui Peoples R China;

    Univ Sci & Technol China Sch Phys Sci Dept Engn & Appl Phys Hefei 230031 Anhui Peoples R China;

    Shenzhen Univ Adv Energy Res Ctr Shenzhen 518060 Peoples R China|Shenzhen Univ Coll Optoelect Engn Minist Educ & Guangdong Prov Key Lab Optoelect Devices & Syst Shenzhen 518060 Peoples R China;

    Chinese Acad Sci Inst Plasma Phys Hefei 230031 Anhui Peoples R China;

    Chinese Acad Sci Inst Plasma Phys Hefei 230031 Anhui Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CFETR; Impurity seeding; Numerical modelling; Fusion reactor;

    机译:CFetr;杂质播种;数值建模;融合反应器;

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