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On the electrical properties under irradiation of porous SiC prepared by sacrificial template technique

机译:牺牲模板技术制备的多孔SiC在辐照下的电性能

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摘要

Flow Channel Inserts are the key elements in the DCLL breeder blanket concept for the required electrical insulation to reduce magnetohydrodynamic effects. Porous SiC materials produced for this purpose by a novel and inexpensive method which allows one to obtain different porosity percentage and physical properties are characterized regarding electrical conductivity and considering radiation effects. Insulating properties are verified before, during, and after 1.8 MeV electrons up to 140 MGy. Results indicate good stability under high temperature, and fusion-relevant ionizing radiation dose rates. However, enhanced electrical conductivity is observed when a corrosion and permeation-protective dense SiC layer is deposited onto the samples by chemical vapor deposition. Elemental analyses show differences in the impurity content and distribution which may be responsible for the electrical conductivity increase.
机译:流道嵌件是DCLL繁殖毯概念中关键要素,用于实现所需的电气绝缘以减少磁流体动力效应。通过一种新颖且廉价的方法为此目的而生产的多孔SiC材料,可通过获得一种不同的孔隙率百分比和物理特性来表征电导率并考虑辐射效应。在1.8 MeV电子之前,之中和之后对高达140 MGy的电子进行绝缘性能验证。结果表明在高温下具有良好的稳定性,并且具有与融合有关的电离辐射剂量率。然而,当通过化学气相沉积将腐蚀和防渗透的致密SiC层沉积在样品上时,观察到增强的电导率。元素分析表明杂质含量和分布的差异可能是导致电导率增加的原因。

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  • 来源
    《Fusion Engineering and Design》 |2020年第3期|111428.1-111428.7|共7页
  • 作者

  • 作者单位

    CIEMAT Natl Fus Lab E-28040 Madrid Spain;

    Ceit IK4 Technol Ctr San Sebastian 20018 Spain|Univ Navarra TECNUN San Sebastian 20018 Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electrical conductivity; Silicon carbide; Ionizing radiation; Porous SiC;

    机译:电导率;碳化硅;电离辐射;多孔碳化硅;

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