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Solid state diffusion bonding of doped tungsten alloys with different thermo-mechanical properties

机译:具有不同热机械性能的掺杂钨合金的固态扩散键合

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摘要

To develop joints using W materials with different thermo-mechanical properties, solid state diffusion bonding involving two different W materials (pure W, K-doped W, or K-doped W-3%Re) and using a pure V interlayer (1.5 mm, 0.5 mm, or 0.05 mm thick) were carried out at 1250 °C for 1 h. The use of a thin interlayer was found to be effective from the point of optimizing the strength and thermal diffusivity. Diffusion bonding at lower temperatures or utilizing W materials with higher recrystallization temperatures were also determined to be effective because pure W can recrystallize at 1250 °C. Further evaluation of a wide range of interlayer thicknesses and thermo-mechanical test conditions is necessary based on the present work to obtain optimum W/V/W joints.
机译:为了使用具有不同热机械特性的W材料开发接头,涉及两种不同W材料(纯W,掺K的W或掺K的W-3%Re)的固态扩散结合,并使用纯V中间层(1.5mm)厚度为0.5?mm或0.05?mm)在1250°C下进行1?h。从优化强度和热扩散率的角度,发现使用薄的中间层是有效的。由于纯W可以在1250°C下重结晶,因此在较低温度下扩散键合或使用具有较高重结晶温度的W材料也被认为是有效的。基于目前的工作,需要对大范围的夹层厚度和热机械试验条件进行进一步评估,以获得最佳的W / V / W接头。

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