Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure

摘要

Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4 mW/cm(2), the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600 degrees C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.