Structural, electrical and photoluminescence properties of Er~(3+)-doped SrBi_4Ti_4O_(15)-Bi_4Ti_3O_(12) inter-growth ceramics

摘要

Er3+-doped SrBi4Ti4O15-Bi4Ti3O12 (SBT-BIT-xEr(3+), x = 0.00, 0.05, 0.10, 0.15 and 0.20) inter-growth ceramics were synthesized by the solid-state reaction method. Structural, electrical and up-conversion properties of SBT-BIT-xEr(3+) were investigated. All samples showed a single phase of the orthorhombic structure. Raman spectroscopy indicated that the Er3+ substitution for Bi3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr(3+) ceramics. The substitution of Bi3+ by Er3+ leads to a decrease of dielectric loss tan and an increase of conductivity activation energy. Piezoelectric constant d(33) was slightly improved, but dielectric constant was decreased with the Er-3 + doping. The SBT-BIT-xEr(3+) ceramic with x = 0.15 exhibits the optimized electrical behavior (d(33) similar to 17 pC/N, tan similar to 0.83%). Moreover, two bright green (532 and 548 nm) and one red (670 nm) emission bands were observed under the 980 nm excitation. Optimized emission intensity was also obtained when x = 0.15 for the SBT-BIT-xEr(3+) ceramic. Therefore, this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.