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Exploiting flash memory characteristics to improve performance of RAIS storage systems

机译:利用闪存特性来提高RAIS存储系统的性能

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摘要

Redundant array of independent SSDs (RAIS) is generally based on the traditional RAID design and implementation. The random small write problem is a serious challenge of RAIS. Random small writes in parity-based RAIS systems generate significantly more pre-reads and writes which can degrade RAIS performance and shorten SSD lifetime. In order to overcome the well-known write-penalty problem in the parity-based RAID5 storage systems, several logging techniques such as Parity Logging and Data Logging have been put forward. However, these techniques are originally based on mechanical characteristics of the HDDs, which ignore the properties of the flash memory.In this article, we firstly propose RAISL, a flash-aware logging method that improves the small write performance of RAIS storage systems. RAISL writes new data instead of new data and pre-read data to the log SSD by making full use of the invalid pages on the SSD of RAIS. RAISL does not need to perform the pre-read operations so that the original characteristics of workloads are kept. Secondly, we propose AGCRL on the basis of RAISL to further boost performance. AGCRL combines RAISL with access characteristic to guide read and write cost regulation to improve the performance of RAIS storage systems. Our experiments demonstrate that the RAISL significantly improves write performance and AGCRL improves both of write performance and read performance. AGCRL on average outperforms RAIS5 and RAISL by 39.15% and 16.59% respectively.
机译:独立SSD的冗余阵列(RAIS)通常基于传统的RAID设计和实现。随机小写问题是RAIS面临的严峻挑战。基于奇偶校验的RAIS系统中的随机小写操作会产生更多的预读和写操作,这会降低RAIS性能并缩短SSD寿命。为了克服基于奇偶校验的RAID5存储系统中众所周知的写惩罚问题,提出了几种奇偶校验记录和数据记录技术。但是,这些技术最初是基于HDD的机械特性,而忽略了闪存的属性。在本文中,我们首先提出了RAISL,这是一种闪存感知日志记录方法,可以提高RAIS存储系统的小写性能。 RAISL通过充分利用RAIS SSD上的无效页,将新数据而不是新数据和预读数据写入日志SSD。 RAISL不需要执行预读操作,因此可以保留工作负载的原始特征。其次,我们在RAISL的基础上提出AGCRL,以进一步提高性能。 AGCRL将RAISL与访问特性结合在一起,以指导读写成本调节,以提高RAIS存储系统的性能。我们的实验表明,RAISL显着提高了写入性能,而AGCRL改善了写入性能和读取性能。 AGCRL平均比RAIS5和RAISL分别高39.15%和16.59%。

著录项

  • 来源
    《Frontiers of computer science in China》 |2019年第5期|913-928|共16页
  • 作者单位

    Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Comp, Wuhan 430074, Hubei, Peoples R China;

    Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Comp, Wuhan 430074, Hubei, Peoples R China;

    Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Comp, Wuhan 430074, Hubei, Peoples R China;

    Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Comp, Wuhan 430074, Hubei, Peoples R China;

    Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Comp, Wuhan 430074, Hubei, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    solid state drives; RAIS; properties; performance;

    机译:固态硬盘;RAIS;性能;性能;

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