EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION

摘要

By means of the Ramo–Shockley–Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased.