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Linear and nonlinear optical absorption coefficients in inverse parabolic quantum wells under static external electric field

机译:静态外电场作用下逆抛物线量子阱中的线性和非线性光学吸收系数

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摘要

In the present theoretical study, the linear and third-order nonlinear optical absorption coefficients have been calculated in GaAs/Ga1−x Al x As inverse parabolic quantum wells (single and double) subjected to an external electric field. Our calculations are based on the potential morphing method in the effective mass approximation. The systematic theoretical investigation contains results with all possible combinations of the involved parameters, as quantum well width, quantum barrier width, Al concentration at each well center and magnitude of the external electric field. Our results indicate that in most cases investigated, the increase of the electric field blue-shifts the peak positions of the total absorption coefficient. In all cases studied it became apparent that the incident optical intensity considerably affects the total absorption coefficient.
机译:在目前的理论研究中,已经在GaAs / Ga 1-x Al x As逆抛物线量子阱(单晶和双晶)中计算了线性和三阶非线性光学吸收系数。双重)受到外部电场的作用。我们的计算基于有效质量近似中的势变法。系统的理论研究包含所有相关参数可能组合的结果,例如量子阱宽度,量子势垒宽度,每个阱中心处的Al浓度和外部电场强度。我们的结果表明,在大多数情况下,电场的增加会使总吸收系数的峰值位置发生蓝移。在所有研究的案例中,很明显入射光强度会显着影响总吸收系数。

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