A recipe to design quantum devices that exhibit the theoretical pseudo-Gaussian oscillator electronic states properties is given. The algorithm is described en detail and is illustrated by the computation of a Mn x Cd1- x Te ternary alloy pseudo-Gaussian heterostructure. The numerical procedure reaches beyond of pseudo-Gaussian models and can be used for designing epitaxial growth devices with desired electronic states structure. The calculations are carried out in the envelope function and effective mass approximations.
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机译:给出了设计具有理论伪高斯振荡器电子态特性的量子器件的方法。该算法进行了详细描述,并通过计算Mn x sub> Cd 1- sub> x sub> Te三元合金拟高斯异质结构进行了说明。数值过程超越了伪高斯模型,可用于设计具有所需电子态结构的外延生长器件。在包络函数和有效质量近似中进行计算。
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