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Computer simulation for the conductance of a contact interface. II

机译:接触界面电导的计算机模拟。 II

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A global model for contact conductance has been previously proposed, and global behavior of contact conductance was studied by computer simulation based on the finite-element method (see ibid., vol.CHMT-9, p.150-5, June 1986). Another global property is studied, using the same model and method as previously described. The contact conductance of a single conducting spot is higher when the spot exists in the center of a contact interface than when the spot is close to the edges or corners. The fact can be only intuitively understood; however, it is not indicated quantitatively. The conductance of a single conducting spot is computed against the location of the spot in a contact interface, and the numerical results are illustrated. It is clearly shown that the edge effect of interface to conductance is small unless a conducting spot closely approaches the edges.
机译:先前已经提出了接触电导的全局模型,并且基于有限元方法通过计算机模拟研究了接触电导的全局行为(参见同上,第CHMT-9卷,第150-5页,1986年6月)。使用与前述相同的模型和方法,研究了另一个全局属性。当该点位于接触界面的中心时,单个导电点的接触电导要比该点靠近边缘或拐角时高。事实只能凭直觉来理解;但是,它没有定量显示。根据触点在接触界面中的位置计算单个导电点的电导,并说明了数值结果。清楚地表明,除非导电点紧密靠近边缘,否则界面对电导的边缘效应很小。

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