The breakdown voltage of unguarded and field plate guarded silicon detector diodes

摘要

We have investigated the breakdown of 300 μm thick detector diodes by simulation and measurement. Finite ele- ment analysis reproduces the results of commonly used models in the case of conventional diodes. but demonstrates that they are inapplicable to diodes with the low bulk doping typical of detectors. The strong dependence of breakdown voltage on the magnitude of the oxide charge is quantified for unguarded diodes and for diodes with a simple field plate structure.