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首页> 外文期刊>Energy & fuels >Insights into the Mechanism of Elemental Mercury Adsorption on Graphitic Carbon Nitride: A Density Functional Theory Study
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Insights into the Mechanism of Elemental Mercury Adsorption on Graphitic Carbon Nitride: A Density Functional Theory Study

机译:对石墨碳氮化物元素汞吸附机理的见解:密度泛函理论研究

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摘要

Recently, graphitic carbon nitride (g-C3N4) has been proven to be a novel and effective carbon-based adsorbent for elemental mercury (Hg-0) removal in flue gas due to its peculiar pi-conjugated electronic structure and chemical and thermal stability. However, the active sites and detailed reaction pathways occurring on the g-C3N4 surface are still unknown. Here, g-C3N4 nanoplates with abundant active edge sites (surface defects) are successfully prepared via a thermal polymerization method, which display good Hg-0 adsorption ability. The adsorption behavior of Hg-0 over g-C3N4 is further studied using quantum chemistry calculations based on density functional theory (DFT), aiming at gaining a better understanding of the Hg-0 adsorption structures and bonding mechanisms on the g-C3N4 surface at the atomic level. The calculation results show that the adsorption of Hg-0 on intact g-C3N4 surfaces is poor due to the stable chemical structure of intact g-C3N4 and lack of active electron orbitals. In contrast, g-C3N4 with surface defects, i.e., exposed C or N sites, possesses enhanced Hg0 adsorption ability probably owing to the unsaturated coordination bond environment and the formation of chemical bonds with mercury atoms at the defective sites. The location of defects also has a big influence on the mercury capture ability of g-C3N4. The exposed surface nitrogen is more favorable for mercury capture than the exposed surface carbon.
机译:最近,由于其特殊的PI缀合的电子结构和化学和热稳定性,已经证明了石墨碳氮化物(G-C3N4)是用于元素汞(HG-0)去除的新颖和有效的碳基吸附剂。然而,在G-C3N4表面上发生的活性位点和详细的反应途径仍然未知。这里,通过热聚合方法成功地制备具有丰富的主动边缘位点(表面缺陷)的G-C3N4纳米层,其显示出良好的HG-0吸附能力。通过基于密度泛函理论(DFT)的量子化学计算进一步研究了HG-0上的吸附行为,旨在更好地了解G-C3N4表面上的HG-0吸附结构和粘合机制原子水平。计算结果表明,由于完整的G-C3N4的稳定化学结构,并且缺乏活性电子轨道,Hg-0对完整G-C3N4表面上的Hg-0的吸附差。相反,具有表面缺陷的G-C3N4,即暴露的C或N位点具有增强的HG0吸附能力,可能由于不饱和的配位粘合环境和在缺陷位点的汞原子形成化学键。缺陷的位置对G-C3N4的汞捕获能力产生了很大影响。暴露的表面氮对汞捕获比暴露的表面碳更有利。

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  • 来源
    《Energy & fuels》 |2021年第11期|9322-9331|共10页
  • 作者单位

    Univ Shanghai Sci & Technol Sch Energy & Power Engn Shanghai 200093 Peoples R China;

    Univ Shanghai Sci & Technol Sch Energy & Power Engn Shanghai 200093 Peoples R China|Shanghai Univ Elect Power Coll Energy & Mech Engn Shanghai 200090 Peoples R China;

    Univ Shanghai Sci & Technol Sch Energy & Power Engn Shanghai 200093 Peoples R China;

    Univ Shanghai Sci & Technol Sch Energy & Power Engn Shanghai 200093 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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