Exciton diffusion in organic semiconductors

摘要

The purpose of this review is to provide a basic physical description of the exciton diffusion in organic semiconductors. Furthermore, experimental methods that are used to measure the key parameters of this process as well as strategies to manipulate the exciton diffusion length are summarized. Special attention is devoted to the temperature dependence of exciton diffusion and its relationship to Forster energy transfer rates. An extensive table of more than a hundred measurements of the exciton diffusion length in various organic semiconductors is presented. Finally, an outlook of remaining challenges for future research is provided.