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Monolithic perovskite/silicon-heterojunction tandem solar cells processed at low temperature

机译:低温处理的整体钙钛矿/硅-异质结串联太阳能电池

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摘要

Tandem solar cells combining silicon and perovskite absorbers have the potential to outperform state-of-the-art high efficiency silicon single junction devices. However, the practical fabrication of monolithic silicon/perovskite tandem solar cells is challenging as material properties and processing requirements such as temperature restrict the device design. Here, we fabricate an 18% efficient monolithic tandem cell formed by a silicon heterojunction bottom-and a perovskite top-cell enabling a very high open circuit voltage of 1.78 V. The monolithic integration was realized via low temperature processing of the semitransparent perovskite sub-cell where an energetically aligned electron selective contact was fabricated by atomic layer deposition of tin oxide. The hole selective, transparent top contact was formed by a stack of the organic hole transport material spiro-OMeTAD, molybdenum oxide and sputtered indium tin oxide. The tandem cell design is currently limited by the photo-current generated in the silicon bottom cell that is reduced due to reflectance losses. Based on optical modelling and first experiments, we show that these losses can be significantly reduced by combining optical optimization of the device architecture including light trapping approaches.
机译:结合了硅和钙钛矿吸收剂的串联太阳能电池有可能胜过最新的高效硅单结器件。然而,单片硅/钙钛矿串联太阳能电池的实际制造具有挑战性,因为材料特性和诸如温度的加工要求限制了器件设计。在这里,我们制造了一个效率为18%的整体式串联电池,该串联电池由硅异质结底部和钙钛矿顶部电池组成,能够实现1.78 V的非常高的开路电压。整体式集成是通过对半透明钙钛矿亚晶的低温处理实现的。通过原子层沉积氧化锡制造了能量取向电子选择性接触的电池。空穴选择性的透明顶部触点由有机空穴传输材料spiro-OMeTAD,氧化钼和溅射的铟锡氧化物堆叠而成。目前,串联电池设计受到在硅底部电池中产生的光电流的限制,该光电流由于反射率损失而降低。基于光学建模和第一个实验,我们表明可以通过结合器件结构的光学优化(包括光捕获方法)来显着降低这些损耗。

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  • 来源
    《Energy & environmental science》 |2016年第1期|81-88|共8页
  • 作者单位

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1951 Sion, Switzerland;

    Lab Photomol Sci, CH-1015 Lausanne, Switzerland;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Swiss Fed Inst Technol EPFL, Lab Photon Swiss, CH-1015 Lausanne, Switzerland;

    Swiss Fed Inst Technol EPFL, Lab Photon Swiss, CH-1015 Lausanne, Switzerland;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, PVcomB, D-12489 Berlin, Germany;

    Ecole Polytech Fed Lausanne, Inst Chem Sci & Engn, Grp Mol Engn Funct Mat, CH-1951 Sion, Switzerland;

    Lab Photomol Sci, CH-1015 Lausanne, Switzerland;

    Swiss Fed Inst Technol EPFL, Lab Photon Swiss, CH-1015 Lausanne, Switzerland;

    Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany;

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