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首页> 外文期刊>Energy & environmental science >Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity
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Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity

机译:通过协同优化有效质量和载流子迁移率并抑制双极性热导率来实现高性能n型PbTe

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摘要

Thermoelectric materials enable direct inter-conversion between electrical energy and thermal energy. The conversion efficiency is limited by their complex interdependent thermoelectric parameters. Here, we report that the electrical and thermal transport properties of n-type PbTe can be simultaneously improved by introducing just one component, MnTe. We obtained a maximum ZT of similar to 1.6 at 773 K and an average ZT(ave) of 1.0 at 300-873 K in n-type MnTe alloyed PbTe. This remarkably enhanced performance arises from the triple functions of MnTe alloying: (1) making the conduction band flatter to increase the effective mass from 0.31 m(e) to 0.45 m(e); (2) enlarging the band gap of PbTe to suppress the bipolar thermal conductivity; and (3) introducing point defects instead of nanoprecipitates to reduce the lattice thermal conductivity while maintaining a relatively high carrier mobility. Our results indicate that high performance can be achieved in n-type PbTe by integrating different but synergistic concepts.
机译:热电材料能够实现电能和热能之间的直接相互转换。转换效率受到它们复杂的相互依存的热电参数的限制。在这里,我们报告通过仅引入一种成分MnTe可以同时改善n型PbTe的电学和热学传输性质。在n型MnTe合金PbTe中,我们在773 K处获得的最大ZT接近1.6,在300-873 K处获得的平均ZT(ave)> 1.0。这种显着增强的性能归因于MnTe合金的三重功能:(1)使导带更平坦,以将有效质量从0.31 m(e)增加到0.45 m(e); (2)增大PbTe的带隙以抑制双极热导率; (3)引入点缺陷而不是纳米沉淀来降低晶格热导率,同时保持较高的载流子迁移率。我们的结果表明,通过整合不同但协同的概念,可以在n型PbTe中实现高性能。

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  • 来源
    《Energy & environmental science 》 |2018年第9期| 2486-2495| 共10页
  • 作者单位

    Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;

    Natl Univ Singapore, Dept Mat Sci & Engn, 7 Engn Dr 1, Singapore 117575, Singapore;

    Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China;

    Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;

    Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China;

    Natl Univ Singapore, Dept Mat Sci & Engn, 7 Engn Dr 1, Singapore 117575, Singapore;

    Univ Hong Kong, Dept Mech Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China;

    Natl Univ Singapore, Dept Mat Sci & Engn, 7 Engn Dr 1, Singapore 117575, Singapore;

    Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;

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