Report Summarizes Microelectronic Engineering Study Findings from Kyungpook National University

摘要

2011 AUG 17 - (VerticalNews.com) -- According to the authors of a study fromrnTaegu, South Korea, "We have grown high quality GaN layers on (1 1 1)-oriented siliconrnsubstrate using a two-step growth method and fabricated high-performance normally-off nchannelrnGaN Schottky-barrier MOSFET (SB-MOSFET)."