Influence of Penning ionization on ion source efficiency - numerical simulations

摘要

The numerical model of ionization in the plasma ion source taking the electron impact and Penning effect into account is presented. The influence of the Penning effect on the ionization efficiency is under investigation - it is shown that the carrier gas could improve ionization efficiency several times compared to the pure electron ionization case. Changes of the yield from the Penning ionization are investigated as a function of carrier gas concentration, ionization degree and concentration of carrier gas atoms in the metastable state.