Direct bonding between InP and rare earth iron garnet grown on Gd/sub 3/Ga/sub 5/O/sub 12/ substrate by liquid phase epitaxy

摘要

The bonding of InP and rare earth iron garnet grown on Gd/sub 3/Ga/sub 5/O/sub 12/ substrate without any additional material demonstrated. After chemical treatment, heat treatment in H/sub 2/ ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices.