High temperature InAs infrared detector based on metal-insulator-semiconductor structure

摘要

The Au/Cr/a-SiN/sub x/:H/(n)InAs/GaAs metal-insulator-semiconductor (MIS) capacitor was fabricated as a basic element of charge injection devices using plasma enhanced chemical vapour deposition. The electrical properties of the capacitor were analysed as a function of temperature using high frequency (1 MHz) capacitance-voltage measurements. It was demonstrated that the capacitor can still be biased into deep depletion at 180 K. When this capacitor is used as an integrated infrared detector in a charge injection device, it exhibits the capacity to detect infrared signals at a temperature of 180 K, higher than that of an InSb infrared detector (77 K), and the device can be cooled thermoelectrically.