Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE

摘要

The authors have reduced modulator drive voltage in DFB-LD/modulator integrated light sources (DFB/MODs) taking fabrication tolerance into account. By enhancing the quantum confined Stark effect through well width increase and optimising the doping profile, DFB/MODS with <13 dB extinction ratio at 1.5 V and <4 mW (+6 dBm) output power at 100 mA were achieved while maintaining a reasonably large fabrication tolerance.