On-wafer facet processing for low cost optoelectronic components [semiconductor lasers]

摘要

Strained multiquantum well InP-InGaAsP buried heterostructure lasers were prepared using a novel etched facet/on-wafer facet coating process. Facet trenches were etched using a methane/hydrogen based RIE process. The dielectric and metal layers conventionally used for passivation and electrical contact in a standard laser structure were also used as AR and HR coatings in these devices. DFB laser devices showed lasing thresholds of 8 mA and a front-back power ratio of 10:1 for devices with etched and AR/HR coated facets.