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首页> 外文期刊>Electronics Letters >Microwave switch based on S-N transition in high-T/sub c/ superconducting film
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Microwave switch based on S-N transition in high-T/sub c/ superconducting film

机译:高T / sub c /超导薄膜中基于S-N跃迁的微波开关

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摘要

An effective microwave switch using the transition from the superconducting state to the normal state (S-N transition) is presented. The main problem in designing an S-N switch arises from the low surface resistance of high-T/sub c/ superconducting films in the N-state, which makes it difficult to obtain a low return loss. The authors have found a way to overcome this difficulty by including transformation circuits as an essential part of the S-N switch.
机译:提出了一种有效的微波开关,该开关使用了从超导状态到正常状态的过渡(S-N过渡)。设计S-N开关的主要问题来自处于N态的高T / sub c /超导膜的低表面电阻,这使得难以获得低回波损耗。作者已经找到了一种克服此困难的方法,方法是将转换电路作为S-N开关的重要组成部分。

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