Implantation approach to SEU suppression in GaAs

摘要

It is shown that oxygen-implanted GaAs with oxygen concentrations of 10/sup 20/ cm/sup -3/ (or 10/sup 19/ cm/sup -3/ if co-implanted with Al), annealed in the 500-850/spl deg/C temperature range, can result in highly resistive layers with subpicosecond free-carrier lifetimes. It is suggested that such layers can be used to suppress single event upsets (SEUs) in GaAs digital circuits.