High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

摘要

A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2 nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.