180nm metal gate, high-k dielectric, implant-free III驴V MOSFETs with transconductance of over 425 /spl mu/S//spl mu/m

摘要

Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 muA/mum (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 muS/mum, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Omega mum. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions