Single-chip InGanN green light-emitting diodes with 3W optical output power

摘要

The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm2. The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power.