High-power single spatial mode superluminescent diodes at 675 nm

摘要

The optimisation of AlGaInP/GaInPAs MQW heterostructure metal-organic chemical vapour deposition growth as well as the improvements of active channel formation and P-contact deposition technologies is shown to enable a significantly increased external differential efficiency up to 0.5 mW/mA and catastrophic optical damage threshold up to 50 mW of spatially single-mode superluminescent diodes (SLDs) at central wavelength of 675 nm. Life time tests demonstrated high reliability of new SLDs at continuous wave output power of up to 30 mW. The dependencies of spectral and power characteristics of these SLDs on active channel dimensions are presented. To the best of knowledge, these are the most powerful and broadband SLDs at 675 nm.